Leave a Message
We will call you back soon!
Your message must be between 20-3,000 characters!
Please check your E-mail!
More information facilitates better communication.
Submitted successfully!
We will call you back soon!
Leave a Message
We will call you back soon!
Your message must be between 20-3,000 characters!
Please check your E-mail!
Brand Name: | Vishay General Semiconductor |
---|---|
Model Number: | V20PWM45-M3/I V20PWM45HM3/I |
Minimum Order Quantity: | 1 piece |
Delivery Time: | 2~8 workdays |
Payment Terms: | T/T |
Brand: | Vishay General Semiconductor | Certificate: | / |
---|---|---|---|
Model: | V20PWM45-M3/I V20PWM45HM3/I | MOQ: | 1 Pc |
Price: | Negotiated | Delivery: | 2~8 Workdays |
Payment: | T/T | ||
High Light: | MOS Vishay Semiconductor,TMBS Vishay Semiconductor,V20PWM45 |
Product Description
V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottk
V20PWM45 V20PWM45C-My Rectifier3/I Vishay Semiconductor High Current Density TMBS Trench MOS Barrier Schottky Rectifier DPAK Discrete Semiconductor Products
V20PWM45 :High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 A
V20PWM45C High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A
APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features :
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea
Category
|
Discrete Semiconductor Products
|
Diodes - Rectifiers - Single
|
|
Mfr
|
Vishay General Semiconductor - Diodes Division
|
Series
|
Automotive, AEC-Q101, eSMP®, TMBS®
|
Package
|
Tape & Reel (TR)
|
Part Status
|
Active
|
Diode Type
|
Schottky
|
Voltage - DC Reverse (Vr) (Max)
|
45 V
|
Current - Average Rectified (Io)
|
20A
|
Voltage - Forward (Vf) (Max) @ If
|
660 mV @ 20 A
|
Speed
|
Fast Recovery =< 500ns, > 200mA (Io)
|
Current - Reverse Leakage @ Vr
|
700 µA @ 45 V
|
Capacitance @ Vr, F
|
3100pF @ 4V, 1MHz
|
Mounting Type
|
Surface Mount
|
Package / Case
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
Supplier Device Package
|
SlimDPAK
|
Operating Temperature - Junction
|
-40°C ~ 175°C
|
Base Product Number
|
V20PWM45
|
Part number | V20PWM45-M3/I V20PWM45HM3/I |
Base part number | V20PWM45C-M3/I |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |